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Home › Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity

Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity

US Patent 7550313 · Granted Jun 23, 2009

Estimated economic value: $5,277,000 ⓘ

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