Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Wafer area pressure control for plasma confinement

Wafer area pressure control for plasma confinement

US Patent 7470627 · Granted Dec 30, 2008

Estimated economic value: $27,178,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Generation of a map of a substrate using iterative calculations of non-measured 2019
Computed tomography using intersecting views of plasma using optical emission sp2019
Feature etching using varying supply of power pulses2016
Semiconductor structures with coplanar recessed gate layers and fabrication meth2016
Integrated circuits having replacement metal gates with improved threshold volta2015
Integrated circuits having laterally confined epitaxial material overlying fin s2015
Facilitating mask pattern formation2015
Methods for fabricating integrated circuits with improved patterning schemes2015
In-situ photoresist strip during plasma etching of active hard mask2014
Plasma source electrode2014
Electrode for plasma processes and method for manufacture and use thereof2014
Electrode for plasma processes and method for manufacture and use thereof2014