Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High electron mobility transistor (HEMT) structure with refractory gate metal

High electron mobility transistor (HEMT) structure with refractory gate metal

US Patent 7411226 · Granted Aug 12, 2008

Estimated economic value: $25,456,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for automatically generating malware detection rule recommenda2021
Wrap around gate field effect transistor (WAGFET)2018
Self-aligned double gate recess for semiconductor field effect transistors2017
Embedded hydrogen inhibitors for semiconductor field effect transistors2017
Method of forming a gate contact2015
Method of forming a gate contact2015
Method for forming shielded gate of MOSFET2015
Monolithically integrated active electronic circuit and waveguide structure for 2014
Processing technique to thaw partially frozen fruits and vegetables and incorpor2011
Production of multi-grain, whole-grain, soft and crunchy sheeted snacks2011
Method of forming a high electron mobility transistor hemt, utilizing self-align2011
High electron mobility transistor semiconductor device having field mitigating p2010