Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Self-aligned double gate recess for semiconductor field effect transistors

Self-aligned double gate recess for semiconductor field effect transistors

US Patent 9583589 · Granted Feb 28, 2017

Estimated economic value: $48,296,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Shifting the pinch-off voltage of an InP high electron mobility transistor with 2022
Shifting the pinch-off voltage of an InP high electron mobility transistor with 2022
Wafer-scale catalytic deposition of black phosphorus2020
Methods and apparatus for customizing the audio characteristics of networked voi2016
Method of forming a gate contact2015
Half-through vias for suppression of substrate modes2012
Method of forming a high electron mobility transistor hemt, utilizing self-align2011
Methods and apparatus for controlling audio characteristics of networked voice c2011
High electron mobility transistor semiconductor device having field mitigating p2010
Method and apparatus for detecting and adjusting substrate height2010
High electron mobility transistor having self-aligned miniature field mitigating2010
High electron mobility transistor semiconductor device and fabrication method th2010