Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and device with durable contact on silicon carbide

Method and device with durable contact on silicon carbide

US Patent 7411218 · Granted Aug 12, 2008

Estimated economic value: $3,810,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silicon carbide MOSFET with optional asymmetric gate clamp2023
Silicon carbide junction barrier schottky diode with wave-shaped regions2023
Silicon carbide MOSFET with optional asymmetric gate clamp2022
Optical fibers produced in microgravity environments and method of production2016
Wide band gap semiconductor wafers grown and processed in a microgravity environ2015
Wide bandgap device in parallel with a device that has a lower avalanche breakdo2013
Rugged semiconductor device architecture2012
Rugged semiconductor device architecture2012
Contact method for thin silicon carbide epitaxial layer and semiconductor device2011
Wide bandgap device in parallel with a device that has a lower avalanche breakdo2010
Contact method for thin silicon carbide epitaxial layer and semiconductor device2009
Method and device with durable contact on silicon carbide2009