Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Post polish anneal of atomic layer deposition barrier layers

Post polish anneal of atomic layer deposition barrier layers

US Patent 7335587 · Granted Feb 26, 2008

Estimated economic value: $16,748,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thin film transistors having strain-inducing structures integrated with 2D chann2025
Encapsulation for transition metal dichalcogenide nanosheet transistor and metho2025
Stacked 2D CMOS with inter metal layers2025
Digitally controlled lithographically-defined multi-frequency acoustic resonator2025
Integrated circuit structures with graphene contacts2025
Contact gating for 2D field effect transistors2025
Thin film transistors having semiconductor structures integrated with 2D channel2025
Transistors including two-dimensional materials2025
TMD inverted nanowire integration2025
Transition metal dichalcogenide nanosheet transistors and methods of fabrication2025
Transistors with monocrystalline metal chalcogenide channel materials2025
Transition metal dichalcogenide nanowires and methods of fabrication2024