Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High Q inductor integration

High Q inductor integration

US Patent 7247544 · Granted Jul 24, 2007

Estimated economic value: $12,824,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

BiCMOS integration using a shared SiGe layer2019
BiCMOS integration with reduced masking steps2019
Efficient fabrication of BiCMOS devices2017
Low-cost complementary BiCMOS integration scheme2017
Methods of forming titanium-aluminum layers for gate electrodes and related semi2016
Lawn care maintenance apparatus2015
Method for forming deep silicon via for grounding of circuits and devices, emitt2015
Deep silicon via for grounding of circuits and devices, emitter ballasting and i2013
System and method for monitoring chloride content and concentration induced by a2013
System and method for monitoring chloride content and concentration induced by a2013
Method and apparatus for reducing plasma process induced damage in integrated ci2013
Apparatus and method for isolating integrated circuit components using deep tren2011