Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Sequential lithographic methods to reduce stacking fault nucleation sites

Sequential lithographic methods to reduce stacking fault nucleation sites

US Patent 7226805 · Granted Jun 5, 2007

Estimated economic value: $20,474,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Group III-nitride high-electron mobility transistors with buried p-type layers a2025
Group III-nitride high-electron mobility transistors with buried p-type layers a2024
Arrangement for overvoltage protection of subsea electrical apparatus2023
Heat exchanging arrangement and subsea electronic system2022
Heat exchanging arrangement and subsea electronic system2022
Group III-nitride high-electron mobility transistors with buried p-type layers a2021
Arrangement for subsea cooling of semiconductor modules2020
Gallium nitride high-electron mobility transistors with deep implanted p-type la2020
Arrangement for subsea housing of electric components and manufacturing of the s2019
Power capacitor unit for high pressure applications2019
Pressure compensated subsea electrical system2019
Fluid-cooled stator assemblies having multilayer and multifunctional tubing2019