Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective oxidation of gate stack

Selective oxidation of gate stack

US Patent 7189652 · Granted Mar 13, 2007

Estimated economic value: $8,791,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nonvolatile charge trap memory device having a high dielectric constant blocking2025
Network device and client device2025
PTM retransmission reception by UES in RRC_INACTIVE/idle with DRX2025
Oxide-nitride-oxide stack having multiple oxynitride layers2025
Methods of equalizing gate heights in embedded non-volatile memory on HKMG techn2025
Method of forming oxide-nitride-oxide stack of non-volatile memory and integrati2025
Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device2024
Resistive switching memory devices and method(s) for forming the resistive switc2024
Method of ono integration into logic CMOS flow2024
Memory transistor with multiple charge storing layers and a high work function g2024
Resistive switching memory having confined filament formation and methods thereo2024
Using aluminum as etch stop layer2024