Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone

Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone

US Patent 7173306 · Granted Feb 6, 2007

Estimated economic value: $858,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device with sense element2025
Superjunction transistor device2025
Transistor device2025
RC IGBT and method of producing an RC IGBT2025
Transistor arrangement with a lateral superjunction transistor device2025
Semiconductor switching module with insulated gate bipolar transistor and unipol2025
Electronic circuit with a transistor device and a biasing circuit2024
Semiconductor device having contact trenches extending from opposite sides of a 2024
Power semiconductor device having vertically parallel p-n layers formed in an ac2024
Power semiconductor device having a gate dielectric stack that includes a ferroe2024
Half-bridge circuit including integrated level shifter transistor2024
Silicon carbide device with transistor cell and clamp region2024