Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Power semiconductor device having a gate dielectric stack that includes a ferroelectric insulator

Power semiconductor device having a gate dielectric stack that includes a ferroelectric insulator

US Patent 12068390 · Granted Aug 20, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

RC IGBT and method of producing an RC IGBT2025
Semiconductor switching module with insulated gate bipolar transistor and unipol2025
Power semiconductor switch having a cross-trench structure2023
Vertical power semiconductor device and manufacturing method2023
Semiconductor device having contact layers and manufacturing method2022
RC IGBT2022
RC IGBT with an IGBT section and a diode section2022
Power semiconductor device and method2022
Power semiconductor device2022
Semiconductor die, semiconductor device and IGBT module2022
Power semiconductor device and method of processing a power semiconductor device2022
Semiconductor device having an edge termination region comprising a first edge t2021