Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives

Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives

US Patent 7169531 · Granted Jan 30, 2007

Estimated economic value: $316,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electromechanical component, electromechanical component arrangement, method of 2021
Aromatic imide compound and method for producing same2016
Silicon-containing composition for fine pattern formation and method for fine pa2014
Silicon-based antireflective coating compositions2013
Antireflective coating compositions2012
Method for multiple irradiation of a resist2012
Hardmask process for forming a reverse tone image using polysilazane2011
Composition for coating over a photoresist pattern comprising a lactam2011
Photoactive compounds2010
Process of imaging a photoresist with multiple antireflective coatings2010
Composition for coating over a photoresist pattern2010
Composition for coating over a photoresist pattern2009