Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Resist for photolithography having reactive groups for subsequent modification of the resist structures

Resist for photolithography having reactive groups for subsequent modification of the resist structures

US Patent 7125640 · Granted Oct 24, 2006

Estimated economic value: $188,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for structuring a substrate using a metal mask layer formed using a galva2011
Resist for electron beam lithography and a process for producing photomasks usin2007
Lithographic process for reducing the lateral chromium structure loss in photoma2007
Apparatus and method for proof of outgassing products2006
Chemical consolidation of photoresists in the UV range2006
Silicon-containing resist for photolithography2006
Silicon-containing resist for photolithography2006
Process for silylating photoresists in the UV range2006
Process for structuring a photoresist by UV at less than 160 NM and then aromati2006
Photoresist based on polycondensates and having an increased resolution for use 2006
Photoresist based on polycondensates and having an increased resolution for use 2006
Photoresists with reaction anchors for chemical consolidation of resist structur2006