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Home › Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system

Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system

US Patent 7074723 · Granted Jul 11, 2006

Estimated economic value: $12,872,000 ⓘ

Assignee

Applied Materials

Inventors

Jeffrey D. Chinn (71 patents)
Michael Rattner (9 patents)
Nicholas Pornsin-Sirirak (2 patents)
Yanping Li (25 patents)

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