Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process

Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process

US Patent 7064070 · Granted Jun 20, 2006

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Sustainable silicates and methods for their extraction2024
Method and composition for chemical mechanical planarization of a metal2014
Method and composition for chemical mechanical planarization of a metal or a met2014
Polishing slurry for copper films2013
Method and composition for chemical mechanical planarization of a metal2013
Method and composition for chemical mechanical planarization of a metal or a met2012
Method for chemical mechanical planarization of chalcogenide materials2010
Purification of organic solvent fluids2008
Method for supercritical carbon dioxide processing of fluoro-carbon films2007
Method and apparatus for the electrochemical deposition and planarization of a m2007
System and method for processing a substrate using supercritical carbon dioxide 2007
Vibrating scoop basket2006