Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor with a nitrided silicon gate oxide and method

Semiconductor with a nitrided silicon gate oxide and method

US Patent 6956267 · Granted Oct 18, 2005

Estimated economic value: $16,837,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

RFID integrated circuits with large contact pads2016
RFID integrated circuits with large contact pads2016
Assembling a radio frequency identification (RFID) tag precursor2014
High performance CMOS transistors using PMD liner stress2014
Schottky junction diode devices in CMOS with multiple wells2014
In-situ carbon doped e-SiGeCB stack for MOS transistor2013
Electrostatic discharge management apparatus, systems, and methods2013
Laminated stress overlayer using In-situ multiple plasma treatments for transist2012
Laminated stress overlayer using In-situ multiple plasma treatments for transist2012
Nitrogen based implants for defect reduction in strained silicon2011
PMD liner nitride films and fabrication methods for improved NMOS performance2011
Gate structure and method2011