Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and structure for BiCMOS isolated NMOS transistor

Method and structure for BiCMOS isolated NMOS transistor

US Patent 6927460 · Granted Aug 9, 2005

Estimated economic value: $3,925,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Isolated switched-mode power converter having secondary-side rectified voltage s2023
Circuits and methods for secondary-side rectified voltage sensing in isolated sw2020
Reduction of degradation due to hot carrier injection2017
Method and apparatus for integrated circuit protection2016
Production of laterally diffused oxide semiconductor (LDMOS) device and a bipola2015
Production of high-performance passive devices using existing operations of a se2015
Production of high-performance passive devices using existing operations of a se2015
LDMOS device with double-sloped field plate2014
Use of plate oxide layers to increase bulk oxide thickness in semiconductor devi2014
Master/slave power supply switch driver circuitry2013
Switching power supply gate driver2013
Multi-mode pin usage in a power supply control integrated circuit2013