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Home › Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor process

Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor process

US Patent 9117845 · Granted Aug 25, 2015

Estimated economic value: $5,918,000 ⓘ

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