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Home › Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

US Patent 6855649 · Granted Feb 15, 2005

Estimated economic value: $11,729,000 ⓘ

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