Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing a semiconductor device with sinker contact region

Method for manufacturing a semiconductor device with sinker contact region

US Patent 6806159 · Granted Oct 19, 2004

Estimated economic value: $15,318,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor devices for high frequency applications2025
Mixed pitch track pattern2024
Method and structure for dual sheet resistance trimmable thin film resistors2023
Integrated circuit with resurf region biasing under buried insulator layers2021
Transistor having double isolation with one floating isolation2021
Method and structure for dual sheet resistance trimmable thin film resistors2020
Integrated circuit with resurf region biasing under buried insulator layers2020
Integrated circuit with resurf region biasing under buried insulator layers2019
Structures to avoid floating resurf layer in high voltage lateral devices2019
Method for creating the high voltage complementary BJT with lateral collector on2019
Method and structure for dual sheet resistance trimmable thin film resistors at 2018
Diluted drift layer with variable stripe widths for power transistors2018