Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability

Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability

US Patent 6777747 · Granted Aug 17, 2004

Estimated economic value: $5,635,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for suppressing voltage overshoots2025
Electronic device including a transistor structure2025
Electronic device including a transistor and a shield electrode2024
Integrated transistor and resistor-diode-capacitor snubber2024
Insulated gated field effect transistor structure having shielded source and met2024
Insulated gated field effect transistor structure having shielded source and met2023
Electronic device including a transistor and a shield electrode2022
Insulated gated field effect transistor structure having shielded source and met2022
Trench-based power semiconductor devices with increased breakdown voltage charac2020
Insulated gated field effect transistor structure having shielded source and met2020
Methods and apparatus related to termination regions of a semiconductor device2020
Termination implant enrichment for shielded gate MOSFETS2019