Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods and apparatus related to termination regions of a semiconductor device

Methods and apparatus related to termination regions of a semiconductor device

US Patent 10749027 · Granted Aug 18, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for suppressing voltage overshoots2025
Nacelle inlet structures, engine assemblies and vehicles including the same, and2025
Electronic device including a transistor structure2025
Electronic device including a transistor and a shield electrode2024
Integrated transistor and resistor-diode-capacitor snubber2024
Insulated gated field effect transistor structure having shielded source and met2024
Insulated gated field effect transistor structure having shielded source and met2023
Electronic device including a transistor and a shield electrode2022
Insulated gated field effect transistor structure having shielded source and met2022
Trench-based power semiconductor devices with increased breakdown voltage charac2020
Insulated gated field effect transistor structure having shielded source and met2020
Termination implant enrichment for shielded gate MOSFETS2019