Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Implantation into high-K dielectric material after gate etch to facilitate removal

Implantation into high-K dielectric material after gate etch to facilitate removal

US Patent 6764898 · Granted Jul 20, 2004

Estimated economic value: $1,607,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Aircraft docking guidance system using 3D laser scanner and control method for t2025
Metal oxide varistor with reinforced electrodes2024
Contacts for semiconductor devices2023
Contacts for semiconductor devices2021
Contacts for semiconductor devices2019
Insulated thermal cut-off device2017
Method for manufacturing a surface mount device2017
Method for manufacturing a surface mount device2017
Electrically programmable and eraseable memory device2016
Field effect transistor having germanium nanorod and method of manufacturing the2016
Method for achieving very small feature size in semiconductor device by undertak2016
Method for manufacturing a contact for a semiconductor component and related str2015