Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for making a semiconductor device having a high-k gate dielectric

Method for making a semiconductor device having a high-k gate dielectric

US Patent 6716707 · Granted Apr 6, 2004

Estimated economic value: $23,009,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Staggered vertically spaced integrated circuit line metallization with different2025
Capacitor with dual dielectric layers2025
Subtractively patterned interconnect structures for integrated circuits2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025
Compositional engineering of Schottky diode2025
Integrated circuit interconnect structures with graphene cap2025
Digitally controlled lithographically-defined multi-frequency acoustic resonator2025
Passivation layers for thin film transistors2025
Integrated circuit structures with graphene contacts2025
Deposition tool and method for filling deep trenches2025
Low resistance and reduced reactivity approaches for fabricating contacts and th2025
Gate dielectrics for complementary metal oxide semiconductors transistors and me2025