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Home › Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

US Patent 6709903 · Granted Mar 23, 2004

Estimated economic value: $10,149,000 ⓘ

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