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Home › Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same

Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same

US Patent 6667528 · Granted Dec 23, 2003

Estimated economic value: $13,142,000 ⓘ

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