Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Use of high-K dielectric material in modified ONO structure for semiconductor devices

Use of high-K dielectric material in modified ONO structure for semiconductor devices

US Patent 6642573 · Granted Nov 4, 2003

Estimated economic value: $3,831,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dynamic acoustic emission in-situ testing device and method for electromagnetic 2025
Wide body dump truck2025
In-place supervision method and apparatus suitable for overhead transmission lin2025
Magnesium@high-sulfur coke hydrogen storage material and preparation method ther2025
Pulse current-assisted roll bonding method for magnesium/titanium composite plat2025
Mobile DR applicable to in-vivo detection of multi-thoracolumbar variations in e2025
Energy storage device and energy storage power station2025
Efficient preparation method of bimetallic seamless composite pipe2025
Emergency treatment equipment and method for algal blooms in reservoir tributari2025
Vertebral body distraction support nail2025
Water spraying pipe and cleaning apparatus2025
Electron detection device and scanning electron microscope2025