Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating a merged integrated circuit device

Method for fabricating a merged integrated circuit device

US Patent 6627963 · Granted Sep 30, 2003

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-bypass diode function for gallium arsenide photovoltaic devices2023
Self-bypass diode function for gallium arsenide photovoltaic devices2021
Self-bypass diode function for gallium arsenide photovoltaic devices2021
Optoelectronic devices including heterojunction and intermediate layer2021
High power gallium nitride electronics using miscut substrates2020
Photovoltaic device with back side contacts2020
High power gallium nitride electronics using miscut substrates2020
High power gallium nitride electronics using miscut substrates2019
Thin film batteries comprising a glass or ceramic substrate2018
Optoelectronic devices including heterojunction and intermediate layer2018
Self-bypass diode function for gallium arsenide photovoltaic devices2017
Textured metallic back reflector2017