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Home › Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface

Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface

US Patent 6621165 · Granted Sep 16, 2003

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Inventors

Sergey Lopatin (138 patents)
Paul L. King (34 patents)
Joffre F. Bernard (17 patents)

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