Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming ohmic contacts using a self doping layer for thin-film transistors

Method of forming ohmic contacts using a self doping layer for thin-film transistors

US Patent 6620719 · Granted Sep 16, 2003

Estimated economic value: $13,659,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Micro-electromechanical device having a soft magnetic material electrolessly dep2025
Tailorable electrode capping for microfluidic devices2024
Fluidic cavities for on-chip layering and sealing of separation arrays2024
3D textured composite silicon anode and fluorinated lithium compound electrochem2024
Assembly of a chip to a substrate2023
Direct bonded heterogeneous integration silicon bridge2023
Optical sensor system for quantitative colorimetric liquid analysis2023
Method and apparatus of processor wafer bonding for wafer-scale integrated super2023
Fluidic cavities for on-chip layering and sealing of separation arrays2023
Electrochemical reactor for upgrading methane and small alkanes to longer alkane2023
Transferrable pillar structure for fanout package or interconnect bridge2023
Encapsulating in-situ energy storage device with electrode contact2022