Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field effect transistors with vertical gate side walls and method for making such transistors

Field effect transistors with vertical gate side walls and method for making such transistors

US Patent 6593617 · Granted Jul 15, 2003

Estimated economic value: $18,764,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Distributed semiconductor device methods, apparatus, and systems2014
Distributed semiconductor device methods, apparatus, and systems2014
Method and structure for strained FinFET devices2014
Distributed semiconductor device methods, apparatus, and systems2013
Memory in logic cell2013
Memory cell storage node length2012
FIN field effect transistor2012
Distributed semiconductor device methods, apparatus, and systems2012
Fabrication of self-aligned gallium arsenide MOSFETS using damascene gate method2011
Distributed semiconductor device methods, apparatus, and systems2011
Back gated SRAM cell2011
Method and apparatus for improving SRAM cell stability by using boosted word lin2011