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Home › Method for making deep trench capacitors for DRAMs with reduced faceting at the substrate edge and providing a more uniform pad Si3N4layer across the substrate

Method for making deep trench capacitors for DRAMs with reduced faceting at the substrate edge and providing a more uniform pad Si3N4layer across the substrate

US Patent 6391706 · Granted May 21, 2002

Estimated economic value: $253,000 ⓘ

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