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Home › Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistor

Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistor

US Patent 6380017 · Granted Apr 30, 2002

Estimated economic value: $9,809,000 ⓘ

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