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Home › Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor

Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor

US Patent 6300183 · Granted Oct 9, 2001

Estimated economic value: $74,767,000 ⓘ

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