Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness

Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness

US Patent 5877529 · Granted Mar 2, 1999

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanofiltration composite membranes2023
Filtration material2018
Single layer structure of micron fibers applied in separator for battery2017
Single fiber layer structure of micron or nano fibers and multi-layer structure 2016
Fuel cells, carbon composite structures and methods for manufacturing the same2015
High modulus graphitized carbon fiber and method for fabricating the same2014
Pan-based carbon fibers and fabrication method thereof and precursor raw materia2014
Semiconductor devices with sealed, unlined trenches and methods of forming same2014
Semiconductor devices with sealed, unlined trenches and methods of forming same2014
Filtration material2013
Methods for manufacturing trench MOSFET with implanted drift region2013
Trenched MOSFETS with improved gate-drain (GD) clamp diodes2013