Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming an isolation oxide for silicon-on-insulator technology

Method of forming an isolation oxide for silicon-on-insulator technology

US Patent 5780352 · Granted Jul 14, 1998

Estimated economic value: $12,563,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for forming a semiconductor structure having a porous semiconductor layer2025
Collaborative multi-robot tasks using action primitives2025
Signal-to-noise ratio range consistency check for radar ghost target detection2024
Range doppler consistency check for radar ghost target detection2024
Semiconductor structure having porous semiconductor segment for RF devices and b2021
Semiconductor structure having porous semiconductor layer for RF devices2021
High performance SiGe heterojunction bipolar transistors built on thin-film sili2021
Cloud based spectrum management2020
High performance SiGe heterojunction bipolar transistors built on thin film sili2020
Bulk CMOS RF switch with reduced parasitic capacitance2019
Bulk CMOS RF switch with reduced parasitic capacitance2019
Patch system for in-situ therapeutic treatment2018