Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applications

High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applications

US Patent 10991631 · Granted Apr 27, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Efficient integration of a first substrate without solder bumps with a second su2025
Stress-reduced silicon photonics semiconductor wafer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS)2025
Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS)2025
Integration of optoelectronic devices comprising lithium niobate or other Pockel2025
Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-sem2025
Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-sem2025
Group III-V device on group IV substrate using contacts with precursor stacks2024