Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of treating silicon to obtain thin, buried insulating layer

Method of treating silicon to obtain thin, buried insulating layer

US Patent 5589407 · Granted Dec 31, 1996

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming ultra shallow junctions2006
Method of forming ultra shallow junctions2004
Method for forming silicon-germanium/Si/silicon dioxide heterostructure using ge1998
Silylated photo-resist layer and planarizing method1998
GE-SI SOI MOS transistor and method of fabricating same1998
Semiconductor with implanted dielectric layer having patched pin-holes1997
Method of forming a pattern of silylated planarizing photoresist1996
Graded implantation of oxygen and/or nitrogen constituents to define buried isol1996
Silylated photoresist layer and planarizing method1996
Shallow SIMOX processing method using molecular ion implantation1995
Shallow SIMOX processing method using molecular ion implantation1995
Graded implantation of oxygen and/or nitrogen constituents to define buried isol1995