{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Stress relaxation in dielectric before metallization", "item": "https://www.patentleaderboard.com/patent/5516720"}]}
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Stress relaxation in dielectric before metallization

US Patent 5516720 · Granted May 14, 1996

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