Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making a memory array with field oxide islands eliminated

Method of making a memory array with field oxide islands eliminated

US Patent 5512504 · Granted Apr 30, 1996

Estimated economic value: $2,731,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Devices including stair step structures, and related memory devices and electron2024
Wafer bonded piezoresistive and piezoelectric force sensor and related methods o2024
Integrated systems with force or strain sensing and haptic feedback2024
Wafer bonded piezoresistive and piezoelectric force sensor and related methods o2023
Methods of forming memory devices including stair step structures2022
Devices including stair step structures, and related apparatuses and memory devi2022
Microelectronic devices with symmetrically distributed staircase stadiums and re2022
Wafer bonded piezoresistive and piezoelectric force sensor and related methods o2022
Memory devices including stair step or tiered structures and related methods2020
Memory devices and related methods2020
Isolation between semiconductor components2019
Multiple blocks per string in 3D NAND memory2019