Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits

Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits

US Patent 5391903 · Granted Feb 21, 1995

Estimated economic value: $4,050,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Bonded substrate for an integrated circuit containing a planar intrinsic getteri2006
Bonded substrate for an integrated circuit containing a planar intrinsic getteri2004
Method for forming a bonded substrate containing a planar intrinsic gettering zo2001
Bonded wafer processing1998
Bonded wafer processing1996
SOI CMOS device having body extension for providing sidewall channel1995
Bonded wafer processing1994
Selective recrystallization to reduce P-channel transistor leakage in silicon-on1994
Selective recrystallization to reduce P-channel transistor leakage in silicon-on1994
Selective recrystallization to reduce P-channel transistor leakage in silicon-on1994
SOT CMOS device having differentially doped body extension for providing improve1994
Halter top bag1991