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Home › Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits

Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits

US Patent 5298434 · Granted Mar 29, 1994

Estimated economic value: $5,132,000 ⓘ

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