| 7052973 |
Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone |
Jack H. Linn, Michael G. Shlepr, George V. Rouse |
2006-05-30 |
| 6825532 |
Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone |
Jack H. Linn, Michael G. Shlepr, George V. Rouse |
2004-11-30 |
| 6255195 |
Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method |
Jack H. Linn, Michael G. Shlepr, George V. Rouse |
2001-07-03 |
| 5728624 |
Bonded wafer processing |
Jack H. Linn, Robert K. Lowry, Geroge V. Rouse, James F. Buller |
1998-03-17 |
| 5517047 |
Bonded wafer processing |
Jack H. Linn, Robert K. Lowry, George V. Rouse, James F. Buller |
1996-05-14 |
| H1435 |
SOI CMOS device having body extension for providing sidewall channel |
Richard D. Cherne, Jack E. Clark, II, Glenn A. Dejong, Richard L. Lichtel, Jr., Wesley H. Morris |
1995-05-02 |
| 5391903 |
Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits |
Kurt Strater, Edward F. Hand |
1995-02-21 |
| 5362667 |
Bonded wafer processing |
Jack H. Linn, Robert K. Lowry, George V. Rouse, James F. Buller |
1994-11-08 |
| 5298434 |
Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits |
Kurt Strater, Edward F. Hand |
1994-03-29 |
| 5293052 |
SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop |
Richard D. Cherne, James F. Buller |
1994-03-08 |
