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Home › Method of making a flash EPROM device utilizing a single masking step for etching and implanting source regions within the EPROM core and redundancy areas

Method of making a flash EPROM device utilizing a single masking step for etching and implanting source regions within the EPROM core and redundancy areas

US Patent 5376573 · Granted Dec 27, 1994

Estimated economic value: $9,009,000 ⓘ

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