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Home › Method of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxide

Method of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxide

US Patent 5179031 · Granted Jan 12, 1993

Estimated economic value: $7,385,000 ⓘ

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