Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Tungsten-silicide reoxidation process including annealing in pure nitrogen and subsequent oxidation in oxygen

Tungsten-silicide reoxidation process including annealing in pure nitrogen and subsequent oxidation in oxygen

US Patent 4833099 · Granted May 23, 1989

Estimated economic value: $50,574,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-aligned contact formation utilizing sacrificial polysilicon2009
Flash memory cell having reduced floating gate to floating gate coupling2008
Flash memory cell having reduced floating gate to floating gate coupling2008
Simplified dual damascene process2006
Silicidation method for contactless EPROM related devices1995
Erase performance improvement via dual floating gate processing1993
Process for fabricating a flash EPROM having reduced cell size1993
Method of making source junction breakdown for devices with source-side erasing1993
Erase performance improvement via dual floating gate processing1992
Method for improving device scalability of buried bit line flash EPROM devices h1992
Method for improving erase characteristics of buried bit line flash EPROM device1991
Method for improving erase characteristics of buried bit line flash EPROM device1991