Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making source junction breakdown for devices with source-side erasing

Method of making source junction breakdown for devices with source-side erasing

US Patent 5196361 · Granted Mar 23, 1993

Estimated economic value: $68,526,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory device2023
Electrode structure to improve RRAM performance2022
Memory device2022
Electrode structure to improve RRAM performance2021
Semiconductor device and manufacturing method thereof2021
RRAM-based monotonic counter2021
Memory circuit and formation method thereof2020
Memory circuit and formation method thereof2020
Semiconductor device and manufacturing method thereof2020
Memory device2020
Electrode structure to improve RRAM performance2019
RRAM-based monotonic counter2019