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Home › Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer

Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer

US Patent 4810667 · Granted Mar 7, 1989

Estimated economic value: $1,351,000 ⓘ

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