Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating a bipolar transistor

Method for fabricating a bipolar transistor

US Patent 4701998 · Granted Oct 27, 1987

Estimated economic value: $35,984,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Bipolar transistor with isolation and direct contacts2009
Fully silicided extrinsic base transistor2009
Bipolar transistor having self-aligned silicide and a self-aligned emitter conta2008
Bipolar transistor with isolation and direct contacts2007
Vertical device with optimal trench shape2006
Bipolar transistor having self-aligned silicide and a self-aligned emitter conta2005
In-situ monitoring and control of germanium profile in silicon-germanium alloy f2005
Low defect pre-emitter and pre-base oxide etch for bipolar transistors and relat2005
Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) compo2004
BiCMOS integration scheme with raised extrinsic base2004
Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS2003
Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS2002