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Home › Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering

Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering

US Patent 6800518 · Granted Oct 5, 2004

Estimated economic value: $8,713,000 ⓘ

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